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| Silicon PIN Limiter Diodes 5 MA4L Series V 5.0 Absolute Maximum Ratings1 Features * Lower Insertion Loss and Noise Figure * Higher Peak and Average Operating Power * Various P1dB Compression Powers * Lower Flat Leakage Power * Reliable Silicon Nitride Passivation @ TA = +25C ( Unless otherwise specified ) Parameter Forward Current Operating Temperature Storage Temperature Junction Temperature RF Peak Incident Power RF C.W. Incident Power Mounting Temperature Notes: 1. Exceeding these limits may cause permanent damage. Absolute Maximum 100 mA -55C to +125C -55C to +150C +175C Per Performance Table Per Performance Table +320C for 10 sec. Description M/A-COM produces a series of small and medium I-region length silicon PIN diodes specifically designed for high signal limiter applications. Each of these devices provides circuit designers with lower insertion loss at zero bias, faster response and recovery times, and lower flat leakage power. This series of diode is available as passivated chips (ODS 132 or ODS 134) as well as hermetic surface mount and cylindrical ceramic packages. Consult factory for specific package style availability. A Square Anode Applications The MA4L Series of PIN limiter diodes are designed for use in passive limiter control circuits to protect sensitive receiver components such as low noise amplifiers ( LNA ), detectors, and mixers covering the 10MHz to 18GHz frequency band. .007" +/- .001 (0.18 mm +/- .02) ODS 134 132 Dimension A A Mils 13 +/- 2.0 20 +/- 2.0 mm 0.33 +/- 0.05 0.51 +/- 0.05 Specification Subject to Change Without Notice M/A-COM Inc. 43 South Avenue, Burlington, MA 01803 USA 1 Telephone: 781-564-3100 Silicon PIN Limiter Diodes Un-Packaged Die Electrical Specifications at +25C MA4L Series V 5.0 Nominal Characteristics Part Number Minimum Reverse Voltage VR 20 20 20 30 30 65 100 250 Maximum Reverse Voltage VR 35 35 35 50 50 75 Minimum Cj0V pF 0.13 0.13 0.13 0.13 0.13 0.07 Maximum Cj0V pF 0.20 0.20 0.20 0.20 0.20 0.15 0.15 0.30 Maximum1 RS 10mA Ohms 2.00 2.00 2.00 2.50 2.50 2.50 2.00 1.20 Carrier Lifetime @ 10mA nS 15 15 15 20 20 15 90 800 I-Region Thickness M 2 2 2 3 3 4 13 25 Contact Diameter mils 1.00 1.00 1.00 1.50 1.50 1.50 3.50 4.50 Thermal2 Resistance C/W 200 200 200 150 150 150 30 25 MA4L011-134 MA4L021-134 MA4L022-134 MA4L031-134 MA4L032-134 MA4L062-134 MA4L101-134 MA4L401-132 Nominal High Signal Performance @ +25 C Incident3 Peak Power For 1dB Limiting @ 9.4GHz dBm 7 10 10 16 16 16 19 29 Part Number Incident3 Peak Power For 10dB Limiting @ 9.4GHz dBm 25 30 30 36 36 36 42 52 Incident3 Peak Power For 20dB Limiting @ 9.4GHz dBm 40 43 43 49 49 49 52 65 Recovery3 Time, (3dB) @ 50W Peak Power nS 10 10 10 20 20 20 10 100 Maximum3 Incident Peak Power Maximum4 CW Input Power Watts 100 400 200 800 600 600 900 2000 Watts 2 4 3 5 3 5 4 10 MA4L011-134 MA4L021-134 MA4L022-134 MA4L031-134 MA4L032-134 MA4L062-134 MA4L101-134 MA4L401-132 Specification Subject to Change Without Notice M/A-COM Inc. 43 South Avenue, Burlington, MA 01803 USA 2 Telephone: 781-564-3100 Silicon PIN Limiter Diodes Notes for Specifications and Nominal High Signal Performance Table: MA4L Series V 5.0 1. Maximum Series Resistance - RS, is measured at 500MHz in the ODS-30 package and is equivalent to the total diode resistance : Rs = Rj ( Junction Resistance) + Rc ( Ohmic Resistance) 2. Nominal C.W. Thermal Resistance - TH is measured in ceramic pill package, ODS-30, mounted to a metal ( infinite ) heatsink. Diode only thermal resistance values are approximately 2 C/W lower in value than the ODS-30 listed package values. 3. Maximum High Signal Performance - Measured using a single shunt diode ( die ) attached directly to the gold plated RF housing ground with 2 mil thick conductive silver epoxy in a 50, SMA, connectorized test fixture. Chip anode contact is thermo sonically wire bonded using a 1 mil dia. gold wire onto a 7.2 mil thick Rogers 5880 duroid microstrip trace. A shunt coil provides the D.C. return. Test Frequency = 9.4 GHz, RF pulse width = 1.0 S, 0.001 duty cycle. 4. Maximum C.W Incident Power - Measured in a 50 , SMA, connectorized housing @ 4GHz utilizing a TWT amplifier and the same single diode assembly configuration as stated in Note 3 above. Die Handling and Mounting Information Handling: All semiconductor chips should be handled with care in order to avoid damage or contamination from perspiration, salts, and skin oils. For individual die, the use of plastic tipped tweezers or vacuum pick up tools is strongly recommended. Bulk handling should ensure that abrasion and mechanical shock are minimized. Die Attach: The die have Ti-Pt-Au back and anode metal, with a final gold thickness of 1.0 m. Die can be mounted with a gold-tin, eutectic solder preform or conductive silver epoxy. The metal RF and D.C. ground plane mounting surface must be free of contamination and should have a surface flatness of < +/- 0.002". Eutectic Die Attachment Using Hot Gas Die Bounder: An 80/20, gold-tin eutectic solder preform is recommended with a work surface temperature of 255oC and a tool tip temperature of 220oC. When the hot gas is applied, the temperature at the tool tip should be approximately 290oC. The chip should not be exposed to temperatures greater than 320oC for more than 10 seconds. Eutectic Die Attachment Using Reflow Oven: See Application Note M541, "Bonding and Handling Procedures for Chip Diode Devices" at www.macom.com. for recommended profile. Epoxy Die Attachment: A thin, controlled amount of electrically conductive silver epoxy should be applied at approximately a 1-2 mils thickness to minimize ohmic and thermal resistances. A thin epoxy fillet should be visible around the perimeter of the chip after placement to ensure full area coverage. Cure conductive epoxy per manufacturer's schedule. Die Bonding: The anode bond pads on these die have a Ti-Pt-Au metallization scheme, with a final gold thickness of 1.0 m. Thermosonic wedge wire bonding of 0.001" diameter gold wire is recommended with a stage temperature of 150oC and a force of 18 to 40 grams. Ultrasonic energy should be adjusted to the minimum required. Automatic ball bonding can also be used. See Application Note M541, "Bonding and Handling Procedures for Chip Diode Devices" for more detailed handling and assembly instructions at www.macom.com. Specification Subject to Change Without Notice M/A-COM Inc. 43 South Avenue, Burlington, MA 01803 USA 3 Telephone: 781-564-3100 Silicon PIN Limiter Diodes MA4L Series V 5.0 Typical High Signal Peak Power Performance for the Single Shunt Limiter Diode in a 50 Test Fixture ( Note 3 ) Typical Peak Power Performance for Single Shunt Limiter Diode in 50 Ohm System at 9.4 GHz, 1uS Pulse Width, 0.001 Duty 45 MA4L022-134 MA4L032-134 35 MA4L101-134 30 MA4L401-132 40 Pout ( dBm ) 25 20 15 10 0 dB Loss Line 10 dB Loss Line 20 dB Loss Line 30 dB Loss Line 5 0 0 10 20 Pin ( dBm ) 30 40 50 Specification Subject to Change Without Notice M/A-COM Inc. 43 South Avenue, Burlington, MA 01803 USA 4 Telephone: 781-564-3100 Silicon PIN Limiter Diodes Application Circuits MA4L Series V 5.0 Typical +60dBm Peak Power, 1S P.W., 0.001% Duty Cycle, +20dBm Flat Leakage Limiter Circuit Transmission Line: 90 @ Fo Transmission Line: 90 @ Fo RF Input RF Output MA4L401-132 Coil: D.C. Return MA4L101-134 MA4L032-134 Typical +50 dBm Peak Power, 1S P.W., 0.001% Duty Cycle, +20 dBm Flat Leakage Limiter Circuit Transmission Line: 90 @ Fo RF Input RF Output MA4L032-134 Coil: D.C. Return MA4L022-134 Specification Subject to Change Without Notice M/A-COM Inc. 43 South Avenue, Burlington, MA 01803 USA 5 Telephone: 781-564-3100 Silicon PIN Limiter Diodes Popular Case Styles and Associated Parasitics ( Table I ) MA4L Series V 5.0 Package Style 30 31 32 36 137 186 1056 Package Type Ceramic Pill Ceramic Pill Ceramic Pill Ceramic Pill Ceramic Surface Mount with Leads Ceramic Surface Mount with Leads Ceramic Surface Mount with Wrap Around Contacts Cpkg ( pF ) 0.18 0.18 0.30 0.18 0.14 0.18 0.20 Ls ( nH ) 0.60 0.60 0.40 0.60 0.70 0.70 0.70 Part Numbering and Ordering Information 1. The die only P/N's use either the -132 or -134 suffix (see Electrical Specification Table). 2. The packaged P/N's use the associated suffix as defined in Table I instead of the die number. For example, the MA4L032-134 die in the 186 style package becomes: MA4L032-186 Specification Subject to Change Without Notice M/A-COM Inc. 43 South Avenue, Burlington, MA 01803 USA 6 Telephone: 781-564-3100 |
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